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| SI4559EY Vishay Siliconix N-Channel 60-V (D-S), 175C MOSFET PRODUCT SUMMARY VDS (V) N-Channel 60 rDS(on) (W) 0.055 @ VGS = 10 V 0.075 @ VGS = 4.5 V ID (A) "4.5 "3.9 "3.1 "2.8 P-Channel -60 0.120 @ VGS = -10 V 0.150 @ VGS = -4.5 V D1 D1 S2 SO-8 S1 G1 S2 G2 1 2 3 4 Top View 8 7 6 5 D1 D1 D2 D2 S1 N-Channel MOSFET D2 D2 G2 G1 P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg N-Channel 60 "20 "4.5 "3.8 "30 2.0 2.4 P-Channel -60 Unit V "20 "3.1 "2.6 "30 -2.0 W 1.7 -55 to 175 _C A THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Symbol RthJA N- or P- Channel 62.5 Unit _C/W Notes a. Surface Mounted on FR4 Board, t v 10 sec. Document Number: 70167 S-57253--Rev. D, 24-Feb-98 www.vishay.com S FaxBack 408-970-5600 2-1 SI4559EY Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 mA VDS = VGS, ID = -250 mA VDS = 0 V, VGS = "20 V VDS = 60 V, VGS = 0 V Z G Vl DiC Zero Gate Voltage Drain Current IDSS VDS = -60 V, VGS = 0 V VDS = 60 V, VGS = 0 V, TJ = 55_C VDS = -60 V, VGS = 0 V, TJ = 55_C On-State Drain Currentb ID(on) VDS w 5 V, VGS = 10 V VDS v -5 V, VGS = -10 V VGS = 10 V, ID = 4.5 A Drain-Source On-State Resistanceb DiS OS Ri rDS(on) VGS = -10 V, ID = -3.1 A VGS = 4.5 V, ID = 3.9 A VGS = -4.5 V, ID = -2.8 A Forward Transconductanceb gfs VDS = 15 V, ID = 4.5 A VDS = -15 V, ID = -3.1 A IS = 2.0 A, VGS = 0 V IS = -2.0 A, VGS = 0 V N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 20 -20 0.045 0.100 0.055 0.125 13 7.5 0.9 -0.8 1.2 -1.2 V 0.055 0.120 0.075 0.150 S W 1 -1 "100 "100 2 -2 25 -25 A A mA nA V Symbol Test Condition Min Typa Max Unit Gate-Body Leakage IGSS Diode Forward Voltageb VSD Dynamica Total Gate Charge Qg N-Ch N-Channel N Ch l VDS = 30 V, VGS = 10 V ID = 4.5 A V V, 45 P-Channel VDS = -30 V, VGS = -10 V ID = -3.1A P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Channel N Ch l VDD = 30 V, RL = 30 W ID ^ 1 A, VGEN = 10 V, RG = 6 W P-Channel VDD = -30 V, RL = 30 W 30 V ID ^ -1 A, VGEN = -10 V, RG = 6 W 1 10 N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch IF = 2 A, di/dt = 100 A/ms IF = -2 A, di/dt = 100 A/ms N-Ch P-Ch 19 16 4 4 3 1.6 13 8 11 10 36 12 11 35 35 60 20 15 20 20 60 25 20 50 60 90 ns 30 25 nC C Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-On Delay Time td(on) Rise Time tr Turn-Off Delay Time td(off) Fall Time tf Source-Drain Reverse Recovery Time trr Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. www.vishay.com S FaxBack 408-970-5600 2-2 Document Number: 70167 S-57253--Rev. D, 24-Feb-98 SI4559EY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 30 VGS = 10 thru 5 V 24 I D - Drain Current (A) I D - Drain Current (A) 4V 18 24 25_C 18 150_C 30 TC = -55_C N CHANNEL Transfer Characteristics 12 12 6 2, 1 V 3V 6 0 0 1 2 3 4 5 0 0 1 2 3 4 5 6 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.150 1400 1200 C - Capacitance (pF) 1000 800 600 400 200 Crss 0 0 6 12 18 24 30 0 0 12 Capacitance 0.125 r DS(on) - On-Resistance ( ) 0.100 Ciss 0.075 VGS = 4.5 V 0.050 VGS = 10 V 0.025 Coss 24 36 48 60 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) 10 VDS = 30 V ID = 4.5 A V GS - Gate-to-Source Voltage (V) Gate Charge 2.2 On-Resistance vs. Junction Temperature VGS = 10 V ID = 4.5 A r DS(on) - On-Resistance ( ) (Normalized) 0 4 8 12 16 20 8 1.9 1.6 6 1.3 4 1.0 2 0.7 0 0.4 -50 -25 0 25 50 75 100 125 150 175 Qg - Total Gate Charge (nC) TJ - Junction Temperature (_C) Document Number: 70167 S-57253--Rev. D, 24-Feb-98 www.vishay.com S FaxBack 408-970-5600 2-3 SI4559EY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 20 0.10 N CHANNEL On-Resistance vs. Gate-to-Source Voltage ) r DS(on) - On-Resistance ( 0.08 I S - Source Current (A) 10 0.06 ID = 4.5 A 0.04 TJ = 175_C TJ = 25_C 0.02 1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VSD - Source-to-Drain Voltage (V) 0 0 2 4 6 8 10 VGS - Gate-to-Source Voltage (V) 0.4 0.2 -0.0 V GS(th) Variance (V) Threshold Voltage 50 Single Pulse Power 40 ID = 250 A -0.2 -0.4 -0.6 Power (W) 30 20 10 -0.8 -1.0 -50 0 -25 0 25 50 75 100 125 150 175 0.01 0.1 1 Time (sec) 10 30 TJ - Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 0.05 PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 62.5_C/W 3. TJM - TA = PDMZthJA(t) 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 4. Surface Mounted 1 10 30 Square Wave Pulse Duration (sec) www.vishay.com S FaxBack 408-970-5600 2-4 Document Number: 70167 S-57253--Rev. D, 24-Feb-98 SI4559EY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 30 VGS = 10, 9, 8, 7, 6 V 24 I D - Drain Current (A) I D - Drain Current (A) 5V 18 16 20 TC = -55_C 150_C P CHANNEL Transfer Characteristics 12 25_C 12 4V 8 6 3V 0 0 1 2 3 4 5 6 4 0 0 2 4 6 8 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 1.0 1400 1200 r DS(on) - On-Resistance ( ) 0.8 C - Capacitance (pF) 1000 800 600 400 Coss 200 0 0 4 8 12 16 20 ID - Drain Current (A) 0 0 10 Crss Capacitance Ciss 0.6 0.4 VGS = 4.5 V VGS = 10 V 0.2 20 30 40 50 60 VDS - Drain-to-Source Voltage (V) 10 VDS = 30 V ID = 3.1 A V GS - Gate-to-Source Voltage (V) Gate Charge 2.0 On-Resistance vs. Junction Temperature VGS = 10 V ID = 3.1 A 6 r DS(on) - On-Resistance ( ) (Normalized) 0 4 8 12 16 20 8 1.6 1.2 4 0.8 2 0.4 0 Qg - Total Gate Charge (nC) 0 -50 -25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (_C) Document Number: 70167 S-57253--Rev. D, 24-Feb-98 www.vishay.com S FaxBack 408-970-5600 2-5 SI4559EY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 20 0.5 P CHANNEL On-Resistance vs. Gate-to-Source Voltage 10 I S - Source Current (A) TJ = 175_C r DS(on) - On-Resistance ( ) 0.4 0.3 TJ = 25_C 0.2 ID = 3.1 A 0.1 1 0.00 0.25 0.50 0.75 1.00 1.25 1.50 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) 0.75 Threshold Voltage Single Pulse Power 50 TC = 25_C Single Pulse 40 0.50 V GS(th) Variance (V) 30 0.25 ID = 250 A Power (W) 20 0.00 10 -0.25 -50 0 -25 0 25 50 75 100 125 150 175 0.01 0.1 1 Time (sec) 10 30 TJ - Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 Notes: PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 62.5_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 30 Square Wave Pulse Duration (sec) www.vishay.com S FaxBack 408-970-5600 2-6 Document Number: 70167 S-57253--Rev. D, 24-Feb-98 |
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